JPH0619570Y2 - 気相成長装置のサセプタ回転軸冷却構造 - Google Patents
気相成長装置のサセプタ回転軸冷却構造Info
- Publication number
- JPH0619570Y2 JPH0619570Y2 JP4738988U JP4738988U JPH0619570Y2 JP H0619570 Y2 JPH0619570 Y2 JP H0619570Y2 JP 4738988 U JP4738988 U JP 4738988U JP 4738988 U JP4738988 U JP 4738988U JP H0619570 Y2 JPH0619570 Y2 JP H0619570Y2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- shaft
- rotating shaft
- vacuum chamber
- lower shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001816 cooling Methods 0.000 title claims description 21
- 238000001947 vapour-phase growth Methods 0.000 title claims description 9
- 239000002826 coolant Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 14
- 239000000498 cooling water Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 11
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4738988U JPH0619570Y2 (ja) | 1988-04-08 | 1988-04-08 | 気相成長装置のサセプタ回転軸冷却構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4738988U JPH0619570Y2 (ja) | 1988-04-08 | 1988-04-08 | 気相成長装置のサセプタ回転軸冷却構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01149472U JPH01149472U (en]) | 1989-10-17 |
| JPH0619570Y2 true JPH0619570Y2 (ja) | 1994-05-25 |
Family
ID=31273599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4738988U Expired - Lifetime JPH0619570Y2 (ja) | 1988-04-08 | 1988-04-08 | 気相成長装置のサセプタ回転軸冷却構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0619570Y2 (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2508722Y2 (ja) * | 1989-10-31 | 1996-08-28 | 株式会社島津製作所 | 成膜装置 |
-
1988
- 1988-04-08 JP JP4738988U patent/JPH0619570Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01149472U (en]) | 1989-10-17 |
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